Antiferroelectric oxide thin-films: Fundamentals, properties, and applications

• Published in: Progress in materials science Vol. 142; p. 101231
• Main Authors: Si, Yangyang, Zhang, Tianfu, Liu, Chenhan, Das, Sujit, Xu, Bin, Burkovsky, Roman G., Wei, Xian-Kui, Chen, Zuhuang
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.04.2024
• Subjects: Antiferroelectrics; Double hysteresis loops; Ferroelectrics; Phase transition; Thin films and heterostructures; Double hysteresis loops; Ferroelectrics; Thin films and heterostructures; Antiferroelectrics; Phase transition
• ISSN: 0079-6425; 1873-2208
• DOI: 10.1016/j.pmatsci.2023.101231

Antiferroelectrics have received blooming interests because of a wide range of potential applications in energy storage, solid-state cooling, thermal switch, transducer, actuation, and memory devices. Many of those applications are the most prospective in thin film form. The antiferroelectric ordering in thin films is highly sensitive to a rich set of factors, such as lattice strain, film thickness, surface and interface effects as well as film stoichiometry. To unlock the full potential of these materials and design high-quality thin films for functional devices, a comprehensive and systematic understanding of their behavior is essential. In conjunction with the necessary fundamental background of antiferroelectrics, we review recent progress on various antiferroelectric oxide thin films, the key parameters that trigger their phase transition and the device applications that rely on the robust responses to electric, thermal, and optical stimuli. Current challenges and future perspectives highlight new and emerging research directions in this field. We hope this review can boost the development of antiferroelectric thin-film materials and device design, stimulating more researchers to explore the unknowns together.