Influence of in-situ annealing ambient on p-type conduction in dual ion beam sputtered Sb-doped ZnO thin films

Sb-doped ZnO (SZO) films were deposited on c-plane sapphire substrates by dual ion beam sputtering deposition system and subsequently annealed in-situ in vacuum and in various proportions of O2/(O2 + N2)% from 0% (N2) to 100% (O2). Hall measurements established all SZO films were p-type, as was also...

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Bibliographic Details
Published inApplied physics letters Vol. 103; no. 7
Main Authors Pandey, Sushil Kumar, Kumar Pandey, Saurabh, Awasthi, Vishnu, Gupta, M., Deshpande, U. P., Mukherjee, Shaibal
Format Journal Article
LanguageEnglish
Published United States 12.08.2013
Subjects
ANNEALING
ANTIMONY
ANTIMONY IONS
CONCENTRATION RATIO
DENSITY
DEPOSITION
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
ION BEAMS
MATERIALS SCIENCE
NITROGEN COMPLEXES
P-N JUNCTIONS
SAPPHIRE
SEMICONDUCTOR MATERIALS
SPUTTERING
SUBSTRATES
THIN FILMS
X RADIATION
X-RAY PHOTOELECTRON SPECTROSCOPY
ZINC OXIDES
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Summary:Sb-doped ZnO (SZO) films were deposited on c-plane sapphire substrates by dual ion beam sputtering deposition system and subsequently annealed in-situ in vacuum and in various proportions of O2/(O2 + N2)% from 0% (N2) to 100% (O2). Hall measurements established all SZO films were p-type, as was also confirmed by typical diode-like rectifying current-voltage characteristics from p-ZnO/n-ZnO homojunction. SZO films annealed in O2 ambient exhibited higher hole concentration as compared with films annealed in vacuum or N2 ambient. X-ray photoelectron spectroscopic analysis confirmed that Sb5+ states were more preferable in comparison to Sb3+ states for acceptor-like SbZn-2VZn complex formation in SZO films.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4818819