Electron-irradiation enhanced photoluminescence from GaInNAs∕GaAs quantum wells subject to thermal annealing

• Published in: Applied physics letters Vol. 85; no. 25; pp. 6158 - 6160
• Main Authors: Pavelescu, E.-M., Gheorghiu, A., Dumitrescu, M., Tukiainen, A., Jouhti, T., Hakkarainen, T., Kudrawiec, R., Andrzejewski, J., Misiewicz, J., Tkachenko, N., Dhaka, V. D. S., Lemmetyinen, H., Pessa, M.
• Format: Journal Article
• Language: English
• Published: United States 20.12.2004
• Subjects: ANNEALING; ELECTRON BEAMS; FLUCTUATIONS; GALLIUM ARSENIDES; HETEROJUNCTIONS; INDIUM ARSENIDES; INDIUM NITRIDES; IRRADIATION; MATERIALS SCIENCE; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; POTENTIAL ENERGY; QUANTUM WELLS; SEMICONDUCTOR MATERIALS; SPECTRAL SHIFT; X-RAY DIFFRACTION

Electron irradiation of a 1.3-μm-GaInNAs∕GaAs multi-quantum-well heterostructure, grown by molecular beam epitaxy and subsequently rapid-thermal annealed, is found to induce much stronger photoluminescence than what is observed for an identical as-grown sample upon annealing. Annealing of the irradi...