Electron-irradiation enhanced photoluminescence from GaInNAs∕GaAs quantum wells subject to thermal annealing

Electron irradiation of a 1.3-μm-GaInNAs∕GaAs multi-quantum-well heterostructure, grown by molecular beam epitaxy and subsequently rapid-thermal annealed, is found to induce much stronger photoluminescence than what is observed for an identical as-grown sample upon annealing. Annealing of the irradi...

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Bibliographic Details
Published inApplied physics letters Vol. 85; no. 25; pp. 6158 - 6160
Main Authors Pavelescu, E.-M., Gheorghiu, A., Dumitrescu, M., Tukiainen, A., Jouhti, T., Hakkarainen, T., Kudrawiec, R., Andrzejewski, J., Misiewicz, J., Tkachenko, N., Dhaka, V. D. S., Lemmetyinen, H., Pessa, M.
Format Journal Article
LanguageEnglish
Published United States 20.12.2004
Subjects
ANNEALING
ELECTRON BEAMS
FLUCTUATIONS
GALLIUM ARSENIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM NITRIDES
IRRADIATION
MATERIALS SCIENCE
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
POTENTIAL ENERGY
QUANTUM WELLS
SEMICONDUCTOR MATERIALS
SPECTRAL SHIFT
X-RAY DIFFRACTION
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Summary:Electron irradiation of a 1.3-μm-GaInNAs∕GaAs multi-quantum-well heterostructure, grown by molecular beam epitaxy and subsequently rapid-thermal annealed, is found to induce much stronger photoluminescence than what is observed for an identical as-grown sample upon annealing. Annealing of the irradiated sample also causes a small additional spectral blueshift and reduces alloy potential energy fluctuations at the conduction band minimum. These irradiation-related phenomena are accompanied by small but discernable changes in x-ray diffraction features upon annealing, which indicate compositional and∕or structural changes in the quantum wells.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1834997