Achieving high brightness of silicon nanocrystal light-emitting device with a field-effect approach

We report a field-effect approach to enhance the electroluminescence (EL) from a model Si nanocrystal light-emitting device (Si-NC LED). The field effects are established within the carrier injection regions of the LEDs via introducing an i-type Si layer on the top of active layer and an Al2O3 layer...

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Bibliographic Details
Published inApplied physics letters Vol. 104; no. 6
Main Authors Chen, Jia-Rong, Wang, Dong-Chen, Hao, Hong-Chen, Lu, Ming
Format Journal Article
LanguageEnglish
Published Melville American Institute of Physics 10.02.2014
Subjects
Aluminum oxide
Applied physics
Carrier injection
Electroluminescence
Light emitting diodes
Nanocrystals
Polarity
Silicon substrates
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Summary:We report a field-effect approach to enhance the electroluminescence (EL) from a model Si nanocrystal light-emitting device (Si-NC LED). The field effects are established within the carrier injection regions of the LEDs via introducing an i-type Si layer on the top of active layer and an Al2O3 layer between the active layer and the Si substrate. The fields are consistent in polarity with the forwardly biased electric field within the LEDs. One order of magnitude increases in the EL intensity from Si-NC LED are readily achieved after introducing the field effects.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
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content type line 14
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4865207