Light-sensitive metal-semi-insulator-n+GaAs diodes

The infrared detection property of a new type of Schottky-barrier GaAs epitaxial diode is described. When the diode is forward biased at a few volts it exhibits extreme sensitivity to infrared radiation of 0.895-µm wavelength. The detectivity is typically of the order of 1 to 5 × 10 12 cm(Hz) 1/2 /W...

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Bibliographic Details
Published inProceedings of the IEEE Vol. 59; no. 11; pp. 1636 - 1637
Main Authors Yeh, C., Shabde, S.N.
Format Journal Article
LanguageEnglish
Published IEEE 01.11.1971
Subjects
Bandwidth
Capacitance
Capacitance-voltage characteristics
Charge carrier density
Gallium arsenide
Insulation
Lighting
Schottky diodes
Temperature
Voltage
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Summary:The infrared detection property of a new type of Schottky-barrier GaAs epitaxial diode is described. When the diode is forward biased at a few volts it exhibits extreme sensitivity to infrared radiation of 0.895-µm wavelength. The detectivity is typically of the order of 1 to 5 × 10 12 cm(Hz) 1/2 /W and the response time is approximately 0.1 ms at room temperature. A physical model of this new device is proposed.
ISSN:0018-9219
1558-2256
DOI:10.1109/PROC.1971.8514