Influence of Working Pressure on Ion Sensitive Probe Measurement in Microwave ECR Plasmas
In order to precisely measure the ion parameters in a microwave electron cyclotron resonance plasma using an ion sensitive probe,the dependences of the current-voltage(I-V)characteristics on the shielding height(h)and the potential difference between inner and outer electrodes(V_B)have been investig...
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Published in | Plasma science & technology Vol. 17; no. 4; pp. 294 - 297 |
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Main Author | |
Format | Journal Article |
Language | English |
Published |
01.04.2015
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Subjects | |
Online Access | Get full text |
ISSN | 1009-0630 |
DOI | 10.1088/1009-0630/17/4/06 |
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Summary: | In order to precisely measure the ion parameters in a microwave electron cyclotron resonance plasma using an ion sensitive probe,the dependences of the current-voltage(I-V)characteristics on the shielding height(h)and the potential difference between inner and outer electrodes(V_B)have been investigated at different working pressures of 0.03 Pa and 0.8 Pa.Results show that the I-V curves at higher pressure are more sensitive to the variation of h than those at lower pressure.The influence of V_B on ion temperature(T_i)measurement becomes more prominent when the pressure is increased from 0.03 Pa to 0.8 Pa.Under both pressures,the optimized h is obtained at the condition where the current reaches zero in the positive voltage region with a suitable V_B of-1.5 V because of effective shielding of the electron E×B drift. |
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Bibliography: | working pressure ion sensitive probe ion temperature plasma 34-1187/TL In order to precisely measure the ion parameters in a microwave electron cyclotron resonance plasma using an ion sensitive probe,the dependences of the current-voltage(I-V)characteristics on the shielding height(h)and the potential difference between inner and outer electrodes(V_B)have been investigated at different working pressures of 0.03 Pa and 0.8 Pa.Results show that the I-V curves at higher pressure are more sensitive to the variation of h than those at lower pressure.The influence of V_B on ion temperature(T_i)measurement becomes more prominent when the pressure is increased from 0.03 Pa to 0.8 Pa.Under both pressures,the optimized h is obtained at the condition where the current reaches zero in the positive voltage region with a suitable V_B of-1.5 V because of effective shielding of the electron E×B drift. ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 1009-0630 |
DOI: | 10.1088/1009-0630/17/4/06 |