The influence of solder volume and pad area on Sn–3.8Ag–0.7Cu and Ni UBM reaction in reflow soldering and isothermal aging

• Published in: Microelectronics and reliability Vol. 48; no. 4; pp. 611 - 621
• Main Authors: Wong, C.K., Pang, J.H.L., Tew, J.W., Lok, B.K., Lu, H.J., Ng, F.L., Sun, Y.F.
• Format: Journal Article
• Language: English
• Published: Oxford Elsevier Ltd 01.04.2008; Elsevier
• Subjects: Applied sciences; Design. Technologies. Operation analysis. Testing; Electronics; Exact sciences and technology; Integrated circuits; Microelectronic fabrication (materials and surfaces technology); Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Flip chip bonding; Growth rate; Thermal ageing; Metallizing; Shear strength; Integrated circuit bonding; Microelectronic fabrication; Solder bump; Interconnection; Soldered joint; Integrated circuit; Interface reaction; Reliability; Reflow soldering; Damaging
• ISSN: 0026-2714; 1872-941X
• DOI: 10.1016/j.microrel.2007.05.002

This paper examines various aspects of SAC (Sn–3.8Ag–0.7Cu wt.%) solder and UBM interactions which may impact interconnection reliability as it scales down. With different solder joint sizes, the dissolution rate of UBM and IMC growth kinetics will be different. Solder bumps on 250, 80 and 40 μm diameter UBM pads were investigated. The effect of solder volume/pad metallization area ( V/ A) ratio on IMC growth and Ni dissolution was investigated during reflow soldering and solid state isothermal aging. Higher V/ A ratio produced thinner and more fragmented IMC morphology in SAC solder/Ni UBM reflow soldering interfacial reaction. Lower V/ A ratio produced better defined IMC layer at the Ni UBM interface. When the ratio of V/ A is constant, the IMC morphology and growth trend was found to be similar. After 250 h of isothermal aging, the IMC growth rate of the different bump sizes leveled off. No degradation in shear strength was observed in these solder bump after 500 h of isothermal aging.