3D Sequential Process Integration for CMOS Image Sensor

We developed a new structure of pixel transistors stacked over photodiode named "2-Layer Transistor Pixel Stacked CMOS Image Sensor" (2-Layer Pixel). It was fabricated by 3D sequential process integration with new process techniques, such as thermally stable wafer bonding and deep contacts...

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Bibliographic Details
Published in2021 IEEE International Electron Devices Meeting (IEDM) pp. 30.4.1 - 30.4.4
Main Authors Nakazawa, K., Yamamoto, J., Mori, S., Okamoto, S., Shimizu, A., Baba, K., Fujii, N., Uehara, M., Hiramatsu, K., Kumano, H., Matsumoto, A., Zaitsu, K., Ohnuma, H., Tatani, K., Hirano, T., Iwamoto, H.
Format Conference Proceeding
LanguageEnglish
Published IEEE 11.12.2021
Subjects
Circuit stability
CMOS image sensors
Photodiodes
Thermal sensors
Three-dimensional displays
Transistors
Wafer bonding
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Summary:We developed a new structure of pixel transistors stacked over photodiode named "2-Layer Transistor Pixel Stacked CMOS Image Sensor" (2-Layer Pixel). It was fabricated by 3D sequential process integration with new process techniques, such as thermally stable wafer bonding and deep contacts. With this technology, we successfully increased AMP size and demonstrated backside-illuminated CMOS image sensor of 6752 \times 4928 pixels at 0.7um pitch to prove its functionality and integrity.
ISSN:2156-017X
DOI:10.1109/IEDM19574.2021.9720563