Large area chemical vapor deposition growth of monolayer MoSe2 and its controlled sulfurization to MoS2

Layered transition metal dichalcogenides which are part of the two dimensional materials family are experiencing rapidly growing interest owing to their diverse physical and optoelectronic properties. Large area controllable synthesis of these materials is required for transition from lab scale rese...

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Published inJournal of materials research Vol. 31; no. 7; pp. 917 - 922
Main Authors Ghosh, Rudresh, Kim, Joon-Seok, Roy, Anupam, Chou, Harry, Vu, Mary, Banerjee, Sanjay K., Akinwande, Deji
Format Journal Article
LanguageEnglish
Published New York, USA Cambridge University Press 14.04.2016
Springer International Publishing
Springer Nature B.V
Subjects
Applied and Technical Physics
Biomaterials
Chemical vapor deposition
Graphene
Inorganic Chemistry
Invited Articles
Materials Engineering
Materials research
Materials Science
Nanotechnology
Spectrum analysis
Sulfur
Raman spectroscopy
chemical vapor deposition (CVD)
x-ray photoelectron spectroscopy (XPS)
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Summary:Layered transition metal dichalcogenides which are part of the two dimensional materials family are experiencing rapidly growing interest owing to their diverse physical and optoelectronic properties. Large area controllable synthesis of these materials is required for transition from lab scale research to practical applications. In this work, we present a single step chemical vapor deposition process for large area monolayer growth of molybdenum selenide (MoSe2). We also demonstrate controllable thermal conversion from molybdenum selenide to molybdenum sulfide.
ISSN:0884-2914
2044-5326
DOI:10.1557/jmr.2016.7