Structural, optical and electrical properties of SnxSy thin films grown by spray ultrasonic

• Published in: Journal of semiconductors Vol. 37; no. 3; pp. 14 - 19
• Main Authors: Kherchachi, I. B., Attaf, A., Saidi, H., Bouhdjer, A., Bendjedidi, H., Benkhetta, Y., Azizi, R.
• Format: Journal Article
• Language: English
• Published: Chinese Institute of Electronics 01.03.2016
• Subjects: optical and electrical properties; structural; tin sulfide; ultrasonic spray; X射线衍射分析; 光致发光光谱; 可见光谱; 喷雾; 电学性能; 结构; 薄膜性能; 超声波技术
• ISSN: 1674-4926
• DOI: 10.1088/1674-4926/37/3/032001

Tin sulfide（Snx Sy/ thin films were prepared by a spray ultrasonic technique on glass substrate at 300℃.The influence of deposition time tD2, 4, 6, 8 and 10 min on different properties of thin films, such as（XRD）,photoluminescence（PL） and（UV） spectroscopy visible spectrum and four-point were investigated. X-ray diffraction showed that thin films crystallized in SnS2, SnS, and Sn2S3 phases, but the most prominent one is SnS_2. The results of the（UV） spectroscopy visible spectrum show that the film which was deposited at 4 min has a large transmittance of 60% in the visible region. The photoluminescence spectra exhibited the luminescent peaks in the visible region, which shows its potential application in photovoltaic devices. The electrical resistivity（ρ） values of SnxSy films have changed from 8.1×1064to 1.62Ω·cm with deposition time.