Low Voltage and High Speed 1Xnm 1T1C FE-RAM with Ultra-Thin 5nm HZO

• Published in: 2021 IEEE International Electron Devices Meeting (IEDM) pp. 33.3.1 - 33.3.4
• Main Authors: Sung, Minchul, Rho, Kwangmyoung, Kim, Jayong, Cheon, Junho, Choi, Kiyoung, Kim, Dohee, Em, Hoseok, Park, Gyeongcheol, Woo, Jungwook, Lee, Yeongyu, Ko, Jaehyeon, Kim, Moonhoi, Lee, Gwangyeob, Ryu, Seung Wook, Sheen, Dong Sun, Joo, Yangsung, Kim, Seiyon, Cho, Chang Hyun, Na, Myung-Hee, Kim, Jinkook
• Format: Conference Proceeding
• Language: English
• Published: IEEE 11.12.2021
• Subjects: Capacitors; Electrodes; Low voltage; Manufacturing; Random access memory; Switches; Time measurement
• ISSN: 2156-017X
• DOI: 10.1109/IEDM19574.2021.9720545

World-first 1Xnm half-pitch FE-RAM with 8Gb density was fabricated, and operation was confirmed. The conventional FE-RAM maximizes 2Pr by adjusting the capacitor plate voltage according to the data. In this study, despite using a fixed capacitor plate voltage, we showed that memory operation is possible even at a low voltage of ±0.6V by using the pinched hysteresis of 5nm-thick ultra-thin HZO. We measured the switching speed by changing the write time from 5ns to 80ns. 70% of the total polarization can be switched within 20ns tWR (like the DRAM), and the remaining 30% responds to a wide range of write time between 20 and 80ns. For improving the switching speed, it is necessary to reduce bulk defects or design schemes such as Vcore overdrive.