The future of two-dimensional semiconductors beyond Moore’s law

The primary challenge facing silicon-based electronics, crucial for modern technological progress, is difficulty in dimensional scaling. This stems from a severe deterioration of transistor performance due to carrier scattering when silicon thickness is reduced below a few nanometres. Atomically thi...

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Published inNature nanotechnology Vol. 19; no. 7; pp. 895 - 906
Main Authors Kim, Ki Seok, Kwon, Junyoung, Ryu, Huije, Kim, Changhyun, Kim, Hyunseok, Lee, Eun-Kyu, Lee, Doyoon, Seo, Seunghwan, Han, Ne Myo, Suh, Jun Min, Kim, Jekyung, Song, Min-Kyu, Lee, Sangho, Seol, Minsu, Kim, Jeehwan
Format Journal Article
LanguageEnglish
Published London Nature Publishing Group UK 01.07.2024
Nature Publishing Group
Subjects
639/301/1005/1007
639/925/927/1007
Chemistry and Materials Science
Dielectrics
Electric contacts
Electronics
Electronics industry
Integration
Low dimensional semiconductors
Materials Science
Nanotechnology
Nanotechnology and Microengineering
Review Article
Scaling
Semiconductors
Silicon
Thickness
Transistors
Trends
Two dimensional materials
Online AccessGet full text

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Abstract The primary challenge facing silicon-based electronics, crucial for modern technological progress, is difficulty in dimensional scaling. This stems from a severe deterioration of transistor performance due to carrier scattering when silicon thickness is reduced below a few nanometres. Atomically thin two-dimensional (2D) semiconductors still maintain their electrical characteristics even at sub-nanometre scales and offer the potential for monolithic three-dimensional (3D) integration. Here we explore a strategic shift aimed at addressing the scaling bottleneck of silicon by adopting 2D semiconductors as new channel materials. Examining both academic and industrial viewpoints, we delve into the latest trends in channel materials, the integration of metal contacts and gate dielectrics, and offer insights into the emerging landscape of industrializing 2D semiconductor-based transistors for monolithic 3D integration. This Review explores adopting 2D semiconductors to overcome the scaling bottleneck of Si-based electronics. Recent trends and potential approaches for the development of 2D materials as a channel are discussed. Following this, the prerequisites, obstacles and feasible technologies for integrating contacts and gate dielectrics with 2D semiconductor-based channels are examined. The Review also provides an industrial perspective towards facilitating monolithic 3D integration.
AbstractList The primary challenge facing silicon-based electronics, crucial for modern technological progress, is difficulty in dimensional scaling. This stems from a severe deterioration of transistor performance due to carrier scattering when silicon thickness is reduced below a few nanometres. Atomically thin two-dimensional (2D) semiconductors still maintain their electrical characteristics even at sub-nanometre scales and offer the potential for monolithic three-dimensional (3D) integration. Here we explore a strategic shift aimed at addressing the scaling bottleneck of silicon by adopting 2D semiconductors as new channel materials. Examining both academic and industrial viewpoints, we delve into the latest trends in channel materials, the integration of metal contacts and gate dielectrics, and offer insights into the emerging landscape of industrializing 2D semiconductor-based transistors for monolithic 3D integration.The primary challenge facing silicon-based electronics, crucial for modern technological progress, is difficulty in dimensional scaling. This stems from a severe deterioration of transistor performance due to carrier scattering when silicon thickness is reduced below a few nanometres. Atomically thin two-dimensional (2D) semiconductors still maintain their electrical characteristics even at sub-nanometre scales and offer the potential for monolithic three-dimensional (3D) integration. Here we explore a strategic shift aimed at addressing the scaling bottleneck of silicon by adopting 2D semiconductors as new channel materials. Examining both academic and industrial viewpoints, we delve into the latest trends in channel materials, the integration of metal contacts and gate dielectrics, and offer insights into the emerging landscape of industrializing 2D semiconductor-based transistors for monolithic 3D integration.
The primary challenge facing silicon-based electronics, crucial for modern technological progress, is difficulty in dimensional scaling. This stems from a severe deterioration of transistor performance due to carrier scattering when silicon thickness is reduced below a few nanometres. Atomically thin two-dimensional (2D) semiconductors still maintain their electrical characteristics even at sub-nanometre scales and offer the potential for monolithic three-dimensional (3D) integration. Here we explore a strategic shift aimed at addressing the scaling bottleneck of silicon by adopting 2D semiconductors as new channel materials. Examining both academic and industrial viewpoints, we delve into the latest trends in channel materials, the integration of metal contacts and gate dielectrics, and offer insights into the emerging landscape of industrializing 2D semiconductor-based transistors for monolithic 3D integration. This Review explores adopting 2D semiconductors to overcome the scaling bottleneck of Si-based electronics. Recent trends and potential approaches for the development of 2D materials as a channel are discussed. Following this, the prerequisites, obstacles and feasible technologies for integrating contacts and gate dielectrics with 2D semiconductor-based channels are examined. The Review also provides an industrial perspective towards facilitating monolithic 3D integration.
The primary challenge facing silicon-based electronics, crucial for modern technological progress, is difficulty in dimensional scaling. This stems from a severe deterioration of transistor performance due to carrier scattering when silicon thickness is reduced below a few nanometres. Atomically thin two-dimensional (2D) semiconductors still maintain their electrical characteristics even at sub-nanometre scales and offer the potential for monolithic three-dimensional (3D) integration. Here we explore a strategic shift aimed at addressing the scaling bottleneck of silicon by adopting 2D semiconductors as new channel materials. Examining both academic and industrial viewpoints, we delve into the latest trends in channel materials, the integration of metal contacts and gate dielectrics, and offer insights into the emerging landscape of industrializing 2D semiconductor-based transistors for monolithic 3D integration.
The primary challenge facing silicon-based electronics, crucial for modern technological progress, is difficulty in dimensional scaling. This stems from a severe deterioration of transistor performance due to carrier scattering when silicon thickness is reduced below a few nanometres. Atomically thin two-dimensional (2D) semiconductors still maintain their electrical characteristics even at sub-nanometre scales and offer the potential for monolithic three-dimensional (3D) integration. Here we explore a strategic shift aimed at addressing the scaling bottleneck of silicon by adopting 2D semiconductors as new channel materials. Examining both academic and industrial viewpoints, we delve into the latest trends in channel materials, the integration of metal contacts and gate dielectrics, and offer insights into the emerging landscape of industrializing 2D semiconductor-based transistors for monolithic 3D integration.This Review explores adopting 2D semiconductors to overcome the scaling bottleneck of Si-based electronics. Recent trends and potential approaches for the development of 2D materials as a channel are discussed. Following this, the prerequisites, obstacles and feasible technologies for integrating contacts and gate dielectrics with 2D semiconductor-based channels are examined. The Review also provides an industrial perspective towards facilitating monolithic 3D integration.
Author Han, Ne Myo
Kim, Hyunseok
Lee, Sangho
Kwon, Junyoung
Seo, Seunghwan
Lee, Eun-Kyu
Kim, Jekyung
Kim, Jeehwan
Song, Min-Kyu
Kim, Changhyun
Suh, Jun Min
Ryu, Huije
Seol, Minsu
Lee, Doyoon
Kim, Ki Seok
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Snippet The primary challenge facing silicon-based electronics, crucial for modern technological progress, is difficulty in dimensional scaling. This stems from a...
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SubjectTerms 639/301/1005/1007
639/925/927/1007
Chemistry and Materials Science
Dielectrics
Electric contacts
Electronics
Electronics industry
Integration
Low dimensional semiconductors
Materials Science
Nanotechnology
Nanotechnology and Microengineering
Review Article
Scaling
Semiconductors
Silicon
Thickness
Transistors
Trends
Two dimensional materials
Title The future of two-dimensional semiconductors beyond Moore’s law
URI https://link.springer.com/article/10.1038/s41565-024-01695-1
https://www.ncbi.nlm.nih.gov/pubmed/38951597
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