The future of two-dimensional semiconductors beyond Moore’s law
The primary challenge facing silicon-based electronics, crucial for modern technological progress, is difficulty in dimensional scaling. This stems from a severe deterioration of transistor performance due to carrier scattering when silicon thickness is reduced below a few nanometres. Atomically thi...
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Published in | Nature nanotechnology Vol. 19; no. 7; pp. 895 - 906 |
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Main Authors | , , , , , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
London
Nature Publishing Group UK
01.07.2024
Nature Publishing Group |
Subjects | |
Online Access | Get full text |
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Summary: | The primary challenge facing silicon-based electronics, crucial for modern technological progress, is difficulty in dimensional scaling. This stems from a severe deterioration of transistor performance due to carrier scattering when silicon thickness is reduced below a few nanometres. Atomically thin two-dimensional (2D) semiconductors still maintain their electrical characteristics even at sub-nanometre scales and offer the potential for monolithic three-dimensional (3D) integration. Here we explore a strategic shift aimed at addressing the scaling bottleneck of silicon by adopting 2D semiconductors as new channel materials. Examining both academic and industrial viewpoints, we delve into the latest trends in channel materials, the integration of metal contacts and gate dielectrics, and offer insights into the emerging landscape of industrializing 2D semiconductor-based transistors for monolithic 3D integration.
This Review explores adopting 2D semiconductors to overcome the scaling bottleneck of Si-based electronics. Recent trends and potential approaches for the development of 2D materials as a channel are discussed. Following this, the prerequisites, obstacles and feasible technologies for integrating contacts and gate dielectrics with 2D semiconductor-based channels are examined. The Review also provides an industrial perspective towards facilitating monolithic 3D integration. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 ObjectType-Review-3 content type line 23 |
ISSN: | 1748-3387 1748-3395 1748-3395 |
DOI: | 10.1038/s41565-024-01695-1 |