Electrical and Structural Properties of CVD-Graphene Oxidized Using KMnO4/H2SO4 Solution

We report the electrical properties of graphene grown via chemical vapor deposition (CVD-graphene) and oxidized using a KMnO4/dilute H2SO4 mixture. CVD-graphene was successfully oxidized without any pores or peeling off from the substrates. When the H2SO4 concentration was increased, the electrical...

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Bibliographic Details
Published inCrystals (Basel) Vol. 12; no. 4; p. 439
Main Authors Choi, Jin-Seok, Im, Ki-Sik, Lee, Tae-Kyun, Choi, Yeo-Jin, An, Sung-Jin
Format Journal Article
LanguageEnglish
Published Basel MDPI AG 01.04.2022
Subjects
Carbon
Chemical vapor deposition
Dilution
Electrical properties
Functional groups
Graphene
Mixtures
Oxidation
oxidized graphene
oxygen functional groups
Plasma
Potassium permanganate
Raman spectroscopy
Scanning electron microscopy
Spectrum analysis
Substrates
Sulfuric acid
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Summary:We report the electrical properties of graphene grown via chemical vapor deposition (CVD-graphene) and oxidized using a KMnO4/dilute H2SO4 mixture. CVD-graphene was successfully oxidized without any pores or peeling off from the substrates. When the H2SO4 concentration was increased, the electrical resistance of the oxidized graphene (OG) increased. In particular, OG-20 shows a nonlinear current–voltage curve similar to that of a diode owing to direct tunneling through the interfaces between the nanosized sp2 and sp3 regions. The changes in electrical properties occurred because of structural evolution. As the H2SO4 concentration increased, the number of oxygen functional groups (epoxide/hydroxyl and carboxyl groups) in the OG increased. In addition, a reduction in the average distance between defects in the OG was determined using Raman spectroscopy. Oxidation using a KMnO4/dilute H2SO4 mixture results in CVD-graphene with modified electrical properties for graphene-based applications.
ISSN:2073-4352
2073-4352
DOI:10.3390/cryst12040439