Excitation-Density Dependence of Photoluminescence from Si-Doped AlGaN/AlGaN Multiple Quantum Wells at Low Temperature

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Published inJapanese Journal of Applied Physics Vol. 47; no. 1R; p. 47
Main Authors Kajitani, Ryo, Takeuchi, Misaichi, Aoyagi, Yoshinobu
Format Journal Article
LanguageEnglish
Published 01.01.2008
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Author Kajitani, Ryo
Aoyagi, Yoshinobu
Takeuchi, Misaichi
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Cites_doi 10.1063/1.1763976
10.1103/PhysRevB.60.8849
10.1063/1.363674
10.1002/(SICI)1521-3951(199911)216:1<335::AID-PSSB335>3.0.CO;2-S
10.1063/1.1616199
10.1063/1.122105
10.1063/1.371377
10.1002/pssb.200301782
10.1103/PhysRevB.61.7203
10.1063/1.124874
10.1063/1.95791
10.1063/1.126831
10.1063/1.369664
10.1103/PhysRevB.32.2266
10.1002/pssc.200461496
10.1063/1.122964
10.1063/1.121912
10.1063/1.115234
10.1063/1.119689
10.1103/PhysRevB.57.R9427
10.1063/1.119896
10.1002/pssa.200563508
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References ([12]) 1999; 86
([11]) 2005; 2
([5]) 1998; 73
([13]) 1998; 57
([9]) 2004; 84
15
([22]) 1999; 74
([14]) 1999; 85
([23]) 1997; 71
([10]) 2006; 203
([17]) 1985; 32
([20]) 1985; 46
([3]) 1999; 216
([2]) 2000; 76
([8]) 2003; 237
([21]) 2003; 83
([16]) 1996; 80
([6]) 1995; 67
([7]) 1997; 71
([18]) 2000; 61
([24]) 1999; 75
([4]) 1998; 73
([1]) 1999; 60
([19]) 1999; 4S1
References_xml – volume: 84
  start-page: 5071
  year: 2004
  ident: [9]
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.1763976
– volume: 60
  start-page: 8849
  year: 1999
  ident: [1]
  publication-title: Phys. Rev. B
  doi: 10.1103/PhysRevB.60.8849
– ident: [15]
  publication-title: Mater. Sci. Eng. B.
– volume: 80
  start-page: 6544
  year: 1996
  ident: [16]
  publication-title: J. Appl. Phys.
  doi: 10.1063/1.363674
– volume: 216
  start-page: 335
  year: 1999
  ident: [3]
  publication-title: Phys. Status Solidi B
  doi: 10.1002/(SICI)1521-3951(199911)216:1<335::AID-PSSB335>3.0.CO;2-S
– volume: 83
  start-page: 2787
  year: 2003
  ident: [21]
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.1616199
– volume: 73
  start-page: 1128
  year: 1998
  ident: [5]
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.122105
– volume: 86
  start-page: 4400
  year: 1999
  ident: [12]
  publication-title: J. Appl. Phys.
  doi: 10.1063/1.371377
– volume: 237
  start-page: 353
  year: 2003
  ident: [8]
  publication-title: Phys. Status Solidi B
  doi: 10.1002/pssb.200301782
– volume: 61
  start-page: 7203
  year: 2000
  ident: [18]
  publication-title: Phys. Rev. B
  doi: 10.1103/PhysRevB.61.7203
– volume: 75
  start-page: 1929
  year: 1999
  ident: [24]
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.124874
– volume: 46
  start-page: 991
  year: 1985
  ident: [20]
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.95791
– volume: 76
  start-page: 3950
  year: 2000
  ident: [2]
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.126831
– volume: 85
  start-page: 3222
  year: 1999
  ident: [14]
  publication-title: J. Appl. Phys.
  doi: 10.1063/1.369664
– volume: 32
  start-page: 2266
  year: 1985
  ident: [17]
  publication-title: Phys. Rev. B
  doi: 10.1103/PhysRevB.32.2266
– volume: 2
  start-page: 2377
  year: 2005
  ident: [11]
  publication-title: Phys. Status Solidi C
  doi: 10.1002/pssc.200461496
– volume: 4S1
  start-page: G5
  year: 1999
  ident: [19]
  publication-title: MRS Internet J. Nitride Semicond. Res.
– volume: 74
  start-page: 102
  year: 1999
  ident: [22]
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.122964
– volume: 73
  start-page: 496
  year: 1998
  ident: [4]
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.121912
– volume: 67
  start-page: 3322
  year: 1995
  ident: [6]
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.115234
– volume: 71
  start-page: 921
  year: 1997
  ident: [23]
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.119689
– volume: 57
  start-page: R9427
  year: 1998
  ident: [13]
  publication-title: Phys. Rev. B
  doi: 10.1103/PhysRevB.57.R9427
– volume: 71
  start-page: 1368
  year: 1997
  ident: [7]
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.119896
– volume: 203
  start-page: 149
  year: 2006
  ident: [10]
  publication-title: Phys. Status Solidi A
  doi: 10.1002/pssa.200563508
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Title Excitation-Density Dependence of Photoluminescence from Si-Doped AlGaN/AlGaN Multiple Quantum Wells at Low Temperature
Volume 47
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