Excitation-Density Dependence of Photoluminescence from Si-Doped AlGaN/AlGaN Multiple Quantum Wells at Low Temperature

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 47; no. 1R; p. 47
Main Authors Kajitani, Ryo, Takeuchi, Misaichi, Aoyagi, Yoshinobu
Format Journal Article
LanguageEnglish
Published 01.01.2008
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ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.47.47