Excitation-Density Dependence of Photoluminescence from Si-Doped AlGaN/AlGaN Multiple Quantum Wells at Low Temperature
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Published in | Japanese Journal of Applied Physics Vol. 47; no. 1R; p. 47 |
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Main Authors | , , |
Format | Journal Article |
Language | English |
Published |
01.01.2008
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Online Access | Get full text |
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ISSN: | 0021-4922 1347-4065 |
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DOI: | 10.1143/JJAP.47.47 |