AlGaN/GaN HEMTs on diamond substrate with over 7 W/mm output power density at 10 GHz
Record RF performance of AlGaN/GaN high electron mobility transistors (HEMTs) on a diamond substrate with over 7 W/mm output power density at 10 GHz is reported. It is achieved along with the peak power-added-efficiency over 46% and power gain over 11 dB for 2 × 100 µm gate-width HEMTs at 40 V drain...
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Published in | Electronics letters Vol. 49; no. 20; pp. 1298 - 1299 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
Stevenage
The Institution of Engineering and Technology
01.09.2013
Institution of Engineering and Technology |
Subjects | |
Online Access | Get full text |
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Summary: | Record RF performance of AlGaN/GaN high electron mobility transistors (HEMTs) on a diamond substrate with over 7 W/mm output power density at 10 GHz is reported. It is achieved along with the peak power-added-efficiency over 46% and power gain over 11 dB for 2 × 100 µm gate-width HEMTs at 40 V drain bias. Device wafers are prepared by first removing the host Si (111) substrate and nitride transition layers beneath the channel, depositing a 50 nm dielectric onto the exposed GaN buffer, and finally growing 100 µm of a chemical vapour deposition diamond onto the dielectric adhering to the epitaxial AlGaN/GaN. This approach enables the active GaN channel to be brought within 1 µm of the diamond substrate. Test HEMTs are fabricated using a dielectrically defined 0.25 µm gate length process. |
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Bibliography: | Distribution Statement “A” (Approved for Public Release, Distribution Unlimited) |
ISSN: | 0013-5194 1350-911X 1350-911X |
DOI: | 10.1049/el.2013.1973 |