Experimental investigation of N-MOS inversion layers in the electric quantum limit

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Bibliographic Details
Published inJournal of electronic materials Vol. 21; no. 3; pp. 367 - 372
Main Authors Kalnitsky, A., Boothroyd, A. R., Ellul, J. P., Tarr, N. G., Weaver, L., Beerkens, R.
Format Journal Article
LanguageEnglish
Published 01.03.1992
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content type line 23
ISSN:0361-5235
1543-186X
DOI:10.1007/BF02660468