Modification of the Ge(001) subsurface electronic structure after adsorption of Sn

• Published in: Applied surface science Vol. 599; p. 153884
• Main Authors: Reichmann, Felix, Becker, Andreas P., Hofmann, Emily V.S., Curson, Neil J., Klesse, Wolfgang M., Capellini, Giovanni
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 15.10.2022
• Subjects: (AR)PES; Electronic Structure; GeSn; STM; Thin-Films; Electronic Structure; GeSn; (AR)PES; STM; Thin-Films
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2022.153884

[Display omitted] •Atomic configurations beneath the 1st and 2nd Sn layer on Ge(001) are revealed.•The initial stages of the Schottky barrier formation are probed.•Sn ad-dimers induce a new surface state in the Ge(001) valence band structure.•The effects of intermixing on the electronic structure are detailed. In this work, we investigate how the electronic structure of the Ge(001) surface is modified by the adsorption of Sn atoms. We extend a previously established growth model of the Sn layer formation on Ge(001) with a detailed analysis of surface core-level shifts, observing a prevalence of symmetric Sn ad-dimers at a Sn coverage above onemonolayer. The valence band structure of Ge(001) reveals the appearance of a non-dispersive electronic state after the adsorption of Sn. We correlate the presence of this state to the interaction of electronic states from a Sn ad-dimer configuration with the surface resonances of the Ge up-dimer. Post-deposition annealing leads to full incorporation of Sn and, consequently, to the disappearance of valence band state attributable to Sn ad-atoms. Notably, the adsorption and/or incorporation of Sn removes a Ge(001) surface state above the valence band maximum. The Fermi-level remains pinned close to the valence band maximum, indicating the initial stages of a Schottky barrier formation. Overall, these results provide new fundamental insights into the electronic structure of Sn on Ge(001), crucial for the development of SnGe electronics devices, and more generally of use for understanding the controlled alloying of isoelectronic layered materials.