Homoepitaxy of ZnSe on the citric acid etched (1 0 0)ZnSe surface

ZnSe substrate surfaces were treated by the citric acid-based etchant. Homoepitaxial layers of ZnSe grown by MBE using this etching treatment showed excellent film qualities based on X-ray rocking curve and transmission electron microscopy observations. The electrical properties of the n-ZnSe/n-ZnSe...

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Bibliographic Details
Published inJournal of crystal growth Vol. 201; pp. 474 - 476
Main Authors Kobayashi, M, Wakao, K, Nakamura, S, Jia, A, Yoshikawa, A, Shimotomai, M, Kato, Y, Takahashi, K
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.05.1999
Subjects
Citric acid
C– V
Homoepitaxy
MBE
ZnSe
C– V
MBE
Homoepitaxy
81.05.Dz
73.20.−r
81.15.Hi
ZnSe
Citric acid
61.10.−i
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Summary:ZnSe substrate surfaces were treated by the citric acid-based etchant. Homoepitaxial layers of ZnSe grown by MBE using this etching treatment showed excellent film qualities based on X-ray rocking curve and transmission electron microscopy observations. The electrical properties of the n-ZnSe/n-ZnSe interface prepared using this etchant was studied, and the C– V measurement showed that a good electrical interface was formed.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(98)01379-7