Vapor growth of Zn2GeO4 single crystals

Zn2GeO4 single crystals were grown at 1000–1170°C by the simultaneous oxidation of Zn and GeO vapor species which were continuously generated by the reduction of Zn2GeO4 powder with graphite. The crystal with a maximum size of 14 mm x 0.7 mm × 0.2 mm was grown at 1170°C for 50 h. The forms of the cr...

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Bibliographic Details
Published inJournal of crystal growth Vol. 47; no. 2; pp. 310 - 312
Main Authors Ito, S., Yoneda, N., Shimada, S., Tsunashima, A., Kodaira, K., Matsushita, T.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.08.1979
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Summary:Zn2GeO4 single crystals were grown at 1000–1170°C by the simultaneous oxidation of Zn and GeO vapor species which were continuously generated by the reduction of Zn2GeO4 powder with graphite. The crystal with a maximum size of 14 mm x 0.7 mm × 0.2 mm was grown at 1170°C for 50 h. The forms of the crystals were ribbon-type with a developed (112̄0) face and hexagonal prism-type.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(79)90256-2