Modulation of Insulator-Metal Transition Temperature by Visible Light in La7/8Sr1/8MnO3 Thin Film

Effects of magnetic field and light illumination on the electrical transport properties of La7/8Sr1/8MnO3 thin film grown on a Si substrate are investigated. The film shows an insulator-metal transition at Tp - 191.9 K and a low-temperature resistance minimum at Tmin ≈ 48 K in darkness. Both magneti...

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Published inChinese physics letters Vol. 27; no. 9; pp. 207 - 210
Main Author 胡令 孙玉平 王波 罗轩 盛志高 朱雪斌 宋文海 杨昭荣 戴建明
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.09.2010
Subjects
Darkness
Illumination
Magnetic fields
Modulation
Silicon substrates
Thin films
Transition temperature
Transport properties
三甲基铟
可见光
生长性能
绝缘体
转变温度
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ISSN0256-307X
1741-3540
DOI10.1088/0256-307X/27/9/097504

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Summary:Effects of magnetic field and light illumination on the electrical transport properties of La7/8Sr1/8MnO3 thin film grown on a Si substrate are investigated. The film shows an insulator-metal transition at Tp - 191.9 K and a low-temperature resistance minimum at Tmin ≈ 48 K in darkness. Both magnetic field and light illumination shift the insulator-metal transition temperature Tp to be higher, while the low-temperature transport properties of the film induced by them show different trends. That is, the magnetic field and light illumination make the Tmin shift to lower and higher temperatures, respectively. The enhancement of both Tp and Train under light illumination could be explained in terms of photoinduced hole-doping and demagnetization effects of La7 /8Sr1/8MnO3.
Bibliography:11-1959/O4
TN248.4
TG139.6
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SourceType-Scholarly Journals-1
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ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/27/9/097504