High responsivity photodetector based on mixed-dimensional CsPbBr3/CsPbI2Br heterojunction

•The mixed-dimensional heterojunction PD was fabricated by the solution method.•The heterojunction facilitates the excitons dissociation and carriers transfer.•The PD responsivity is 66 A/W and the specific detectivity is 1.17 × 1011 Jones. The high-performance photodetector (PD) based on mixed-dime...

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Bibliographic Details
Published inMaterials letters Vol. 326; p. 132909
Main Authors Song, Xiaoxian, Wang, Fuguo, Zhang, Haiting, Li, Hongwen, Xu, Ze, Wei, Dongdong, Zhang, Jingjing, Dai, Zijie, Ren, Yunpeng, Ye, Yunxia, Ren, Xudong, Yao, Jianquan
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.11.2022
Subjects
Heterojunction
Mixed dimensional
Optical materials and properties
Photodetector
Semiconductors
Optical materials and properties
Mixed dimensional
Semiconductors
Photodetector
Heterojunction
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Summary:•The mixed-dimensional heterojunction PD was fabricated by the solution method.•The heterojunction facilitates the excitons dissociation and carriers transfer.•The PD responsivity is 66 A/W and the specific detectivity is 1.17 × 1011 Jones. The high-performance photodetector (PD) based on mixed-dimensional (0D/3D) CsPbBr3/CsPbI2Br heterojunction was fabricated by the solution method. As a sensitizer, CsPbBr3 can enhance light absorption, and the heterojunction promotes the process of exciton dissociation and carrier transfer, thus improving the comprehensive performance of PD. Under 405 nm irradiation, responsivity and specific detectivity of the device are 66 A/W and 1.17 × 1011 Jones. This work provides a feasible strategy for heterojunction devices based on perovskite.
ISSN:0167-577X
1873-4979
DOI:10.1016/j.matlet.2022.132909