Effects of a Ni alloying element on Al-Ni metallization

The effect of the Ni content (2-18 at.% Ni) in Al thin films on their resistivity, hillock formation and Al3Ni compound formation was investigated. The as-deposited Al-Ni-alloy films showed high elastic strains which increased with increasing Ni content. In addition, the annealing of the supersatura...

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Published inSemiconductor science and technology Vol. 27; no. 1; pp. 15021 - 15026
Main Authors Lee, K W, Han, D M, Jeong, K H, Lee, K B, Lee, J G, Jeong, C O, Bae, Y H, Ruh, H, Kim, C S, Lee, E G
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 11.01.2012
Institute of Physics
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Summary:The effect of the Ni content (2-18 at.% Ni) in Al thin films on their resistivity, hillock formation and Al3Ni compound formation was investigated. The as-deposited Al-Ni-alloy films showed high elastic strains which increased with increasing Ni content. In addition, the annealing of the supersaturated Al-Ni-alloy thin films yielded two phases: Al3Ni and Al with strong (2 2 0) and (1 1 1) textures, respectively, suggesting that the nucleation of (2 2 0) Al3Ni is closely associated with (1 1 1) Al. The resistivity of the as-annealed Al-Ni-alloy films varied as functions of the volume fraction and grain size of the two phases, which were determined by the Ni content and annealing temperature, respectively. The hillock formation was effectively suppressed when a small amount of Ni was added to the Al alloy. The results showed that a Ni content of less than approximately 4.5 at.% produced hillock-free Al-alloy thin films with a low resistivity of less than 6.0 µΩ cm upon annealing at 350 °C.
ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/27/1/015021