Liquid phase epitaxy of Si from Pb solutions

Liquid phase epitaxy of Si was performed in a conventional tipping boat system in hydrogen atmosphere. Pure Pb was used as a solvent. Diffusion of Si in Pb solution was the rate determining step of the layer growth. The diffusion coefficient of Si in molten Pb at 987°C was determined to be 3.2×10 −5...

Full description

Saved in:
Bibliographic Details
Published inJournal of crystal growth Vol. 198; pp. 1045 - 1048
Main Authors Konuma, M, Cristiani, G, Czech, E, Silier, I
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.03.1999
Subjects
Diffusion
Liquid phase epitaxy
Liquid phase epitaxy
Pb
Si
66.10.C
Diffusion
81.15.L
81.10.A
Online AccessGet full text

Cover

More Information
Summary:Liquid phase epitaxy of Si was performed in a conventional tipping boat system in hydrogen atmosphere. Pure Pb was used as a solvent. Diffusion of Si in Pb solution was the rate determining step of the layer growth. The diffusion coefficient of Si in molten Pb at 987°C was determined to be 3.2×10 −5 cm 2 s −1. The surface of the grown layer showed wave-like morphology which might be caused by the etching and reconstruction of Si (1 1 1) surface in H 2 gas containing Pb vapor. Epitaxial layers having a thickness of up to about 4 μm were obtained. The unintentionally doped layers showed n-type electrical conductivity and room temperature resistivity higher than 15 Ω cm.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(98)01085-9