Preparation of epitaxial GaAs layers for negative electron affinity photocathodes by using the electrical current-induced liquid phase epitaxy
The article reports on a new method of electrical current-induced liquid phase epitaxy used to prepare epitaxial GaAs layers doped with zinc. Measurement results have proved the LPEE to be a suitable method for producing NEA photocathodes.
Saved in:
| Published in | Journal of luminescence Vol. 40; pp. 911 - 912 |
|---|---|
| Main Authors | , |
| Format | Journal Article |
| Language | English |
| Published |
Elsevier B.V
01.02.1988
|
| Online Access | Get full text |
Cover
Loading…
| Summary: | The article reports on a new method of electrical current-induced liquid phase epitaxy used to prepare epitaxial GaAs layers doped with zinc. Measurement results have proved the LPEE to be a suitable method for producing NEA photocathodes. |
|---|---|
| ISSN: | 0022-2313 1872-7883 |
| DOI: | 10.1016/0022-2313(88)90495-4 |