Characterization of Random Telegraph Signal Noise of High-Performance p-MOSFETs With a High- k Dielectric/Metal Gate

• Published in: IEEE electron device letters Vol. 32; no. 5; pp. 686 - 688
• Main Authors: Hyuk-Min Kwon, In-Shik Han, Jung-Deuk Bok, Sang-Uk Park, Yi-Jung Jung, Ga-Won Lee, Yi-Sun Chung, Jung-Hwan Lee, Chang Yong Kang, Kirsch, P, Jammy, R, Hi-Deok Lee
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.05.2011; Institute of Electrical and Electronics Engineers
• Subjects: Applied sciences; Devices; Dielectrics; Drains; Electronics; Exact sciences and technology; Gates; Hafnium oxide ( hbox{HfO}_{2} ); high- k (HK) dielectric; Logic gates; low-frequency noise; MOSFET circuits; MOSFETs; Noise; Noise measurement; Oxides; random telegraph signal (RTS) noise; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Stacks; Time domain analysis; Transistors; Wafers; High performance; MOSFET; random telegraph signal (RTS) noise; Tantalum nitride; Analog signal; Mixed signal circuit; Transistor gate; Multiple layer; Hafnium oxide; ); 1/f noise; Hafnium oxide (HfO; Random telegraph noise; low-frequency noise; Complementary MOS transistor; Gate oxide; Drain current; High k dielectric; Low-power electronics; Silicon Nitrides oxides; high-k (HK) dielectric; Wafer
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2011.2114633

The behavior of I D random telegraph signal (RTS) noise of a p-MOSFET with an advanced gate stack of HfO 2 /TaN is experimentally investigated and discussed. The I D -RTS noise is evaluated on a wafer level (100 sites) for statistical evaluation. The observed ratio of I D -RTS noise on a wafer is quite similar to that of a p-MOSFET with the conventional plasma-SiON dielectric, which means that the noise distribution on a wafer level is independent of the gate oxide structure and/or material. However, the relative magnitude of change of the drain current to the applied current (ΔI D /I D ) of the p-MOSFETs with high-k (HK) dielectrics is greater than that of p-MOSFETs with conventional plasma-SiON dielectrics by about six times due to the greater number of preexisting bulk traps in the HK dielectric. Therefore, I D -RTS noise and its associated 1/f noise can present a serious issue to the CMOSFET with an advanced HK dielectric for low-power analog and mixed-signal applications.