Temperature dependence of conductance of electrostatically disordered quasi-2D semiconductor systems near an insulator-metal percolation transition

• Published in: Semiconductors (Woodbury, N.Y.) Vol. 36; no. 10; pp. 1163 - 1168
• Main Authors: Davydov, A. B., Aronzon, B. A., Bakaushin, D. A., Vedeneev, A. S.
• Format: Journal Article
• Language: English
• Published: New York Springer Nature B.V 01.10.2002
• Subjects: Charge density; Domains; Electron transport; Electron tunneling; Electronic systems; Metal-nitride-oxide-semiconductors; Percolation; Potential barriers; Semiconductor devices; Silicon transistors; Temperature dependence
• ISSN: 1063-7826; 1090-6479
• DOI: 10.1134/1.1513863

The experimental temperature dependence (4.2–300 K) of the conductance of mesoscopic quasi-2D electronic systems under conditions of the insulator-metal percolation transition are discussed for the case of metal-nitride-oxide-semiconductor silicon transistor structures with an inversion n channel and an extremely high (≥1013 cm−2) built-in charge density (source of electrostatic fluctuation potential). Saddle domains of the fluctuation potential are analyzed within the framework of the Landauer-Buttiker formalism. These domains, being point quantum contacts between wells in the chaotic potential distribution, determine both the nature of electron transport and the conditions of the insulator-metal transitions. The results of analyzing the dependence of the conductivity on temperature and field (on the gate voltage) are shown to be consistent. The shape of the effective potential barrier for the electron tunneling transport across the saddle domains is reconstructed.