RIXS approach to local environment around impurity atoms in diluted magnetic semiconductors and dielectrics

• Published in: Journal of electron spectroscopy and related phenomena Vol. 181; no. 2; pp. 202 - 205
• Main Authors: Chang, G.S., Kurmaev, E.Z., Finkelstein, L.D., Moewes, A., Dinia, A.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.08.2010
• Subjects: Diluted magnetic semiconductors; Local bonding structure; X-ray spectroscopy; Diluted magnetic semiconductors; Local bonding structure; X-ray spectroscopy
• ISSN: 0368-2048; 1873-2526
• DOI: 10.1016/j.elspec.2010.05.001

The use of resonant inelastic X-ray scattering (RIXS) to understand local environment around magnetic atoms in various diluted magnetic semiconductors (DMS) and dielectrics (DMD) has been overviewed. The overall spectroscopic results of transition-metal-doped GaAs DMS and wide band-gap oxide DMD systems show that the magnetic transition-metal dopants can occupy not only cation sites but also interstitial ones and the interactions between substituted and interstitial magnetic ions play a very important role on the nature of magnetic properties of these materials. This suggests that a careful verification of presence/absence of structural defects is required, especially for when the size of defect configuration is very small (less than few nm).