Nitrogen doped single layer graphene for CZTS-based thin film solar cells

• Published in: Optical materials Vol. 150; p. 115167
• Main Authors: Olgar, Mehmet Ali, Erkan, Serkan, Altuntepe, Ali, Zan, Recep
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.04.2024
• Subjects: CVD; CZTS; Nitrogen doped-graphene; Solar cell; Sputtering; CVD; Solar cell; CZTS; Nitrogen doped-graphene; Sputtering
• ISSN: 0925-3467; 1873-1252
• DOI: 10.1016/j.optmat.2024.115167

CdS thin films are commonly utilized as a buffer layer in chalcopyrite thin-film solar cells. However, due to the toxic nature of Cadmium (Cd), ongoing efforts are being directed towards exploring alternative options. In this contribution, doped graphene film with remarkable optical and electrical properties has been introduced for the first time as an alternative buffer layer, replacing CdS in CZTS thin-film solar cell application. In this study, nitrogen-doped graphene (N-doped graphene) film was utilized as a substitute buffer layer in the CZTS thin-film solar cell structure, replacing the conventional CdS thin film. For comparative analysis, CZTS/N-doped graphene and CZTS/CdS traditional solar cell structures were fabricated and separately characterized. The CZTS thin films produced were examined through EDX, XRD, SEM, Raman, optical transmission and PL spectroscopy measurements. According to performed analyses, the Cu-poor and Zn-rich kesterite CZTS thin films exhibited a uniform and dense polycrystalline microstructure as observed in surface and cross-sectional SEM images. XRD spectra of the kesterite CZTS thin film displayed predominant peaks corresponding to the (112), (220/204), and (312/116) diffraction planes of the kesterite CZTS phase. Raman spectra showed a dominant peak at ∼336 cm−1 associated with the kesterite CZTS phase. PL emission spectra indicated transitions from the conduction band to defect levels. The CVD-grown doped graphene film exhibited a 3.43 I2D/IG ratio and a 25 cm−1 FWHM of the 2D peak, indicating a single-layer graphene according to Raman analysis. Permanent nitrogen doping with a 2% atomic concentration was confirmed by XPS measurement. The optical transmission measurement of the single layer doped graphene film showed a 95% transmittance value. Nitrogen doping was contributed to decrease the sheet resistance of the graphene film. The Glass/Mo/CZTS/N-doped graphene/i-ZnO/ITO/Al solar cell displayed a VOC of 0.267 V, JSC of 24.6 mA/cm2, FF of 36.46, and η of 2.37%, showing higher FF and Jsc values but lower conversion efficiency compared to the Glass/Mo/CZTS/CdS/i-ZnO/ITO/Al traditional solar cell structure. Hence, the superior working function and transparency properties position the N-doped graphene film as a competitive buffer layer for use in CZTS-based thin-film solar cells. [Display omitted] •CZTS thin films were fabricated employing sputtering and RTA techniques.•CVD grown nitrogen-doped graphene film was employed as a buffer layer.•The sheet resistance of the graphene film decreased via nitrogen doping.•Glass/Mo/CZTS/N-doped graphene/i-ZnO/ITO/Al showed higher FF and Jsc values.•It was seen that N-doped graphene can be used as an alternative to CdS thin film.