Complementary GaAs (CGaAs™): New enhancements

• Published in: Solid-state electronics Vol. 41; no. 10; pp. 1433 - 1439
• Main Authors: Abrokwah, J.K., Bernhardt, B., Lamacchia, M.
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.10.1997

Performance improvements in complementary GaAs circuits require further device improvements. Evolutionary device improvements were made in the areas of threshold voltage, submicron gates, and gate leakage. The threshold voltage of n-channel devices were de˜coupled from p-channel devices by setting a...