Observation of a conducting filament within unhydrogenated amorphous silicon
Random telegraph switching (RTS) noise in unhydrogenated amorphous silicon was observed and analysed. Switching is observed as a step-like fluctuation in the material resistance and is shown to result from a filament-like microstructure where intermittent carrier transport is dictated by a bistable...
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| Published in | Journal of non-crystalline solids Vol. 217; no. 1; pp. 106 - 110 |
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| Main Authors | , |
| Format | Journal Article |
| Language | English |
| Published |
Elsevier B.V
01.08.1997
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| Online Access | Get full text |
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| Summary: | Random telegraph switching (RTS) noise in unhydrogenated amorphous silicon was observed and analysed. Switching is observed as a step-like fluctuation in the material resistance and is shown to result from a filament-like microstructure where intermittent carrier transport is dictated by a bistable defect. One state allows conduction through the filament while the other state inhibits transport. Analysis of the RTS signal over a range of temperature and current provides the opportunity to examine the transport properties of the microstructure. The results show that this filament has a smaller temperature coefficient of resistance than the bulk material. |
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| ISSN: | 0022-3093 1873-4812 |
| DOI: | 10.1016/S0022-3093(97)00112-9 |