Steady-state photoluminescence studies of TFA-CsPbBr3: Zn perovskite quantum dots
Perovskite quantum dots (QDs) have garnered significant interest for their superior optical properties. Despite their attractive photovoltaic properties and chemical processing ability, the high defects density within QDs can result in the annihilation of luminescence. In this study, cesium trifluor...
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Published in | Optical materials Vol. 151; p. 115382 |
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Main Authors | , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier B.V
01.05.2024
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Subjects | |
Online Access | Get full text |
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Summary: | Perovskite quantum dots (QDs) have garnered significant interest for their superior optical properties. Despite their attractive photovoltaic properties and chemical processing ability, the high defects density within QDs can result in the annihilation of luminescence. In this study, cesium trifluoroacetic acid (CsTFA) was used as the cesium source, replacing conventional cesium carbonate (Cs2CO3) and introducing TFA ligands to improve the luminescence quality of QDs. As well as doping with Zn2+ to enhance both the stability and luminescence quality of the quantum dot solution. The doped QDs exhibit the highest photoluminescence (PL) intensity, which is further enhanced by the perovskite QDs with TFA as a ligand. Furthermore, the PL spectra of CsPbBr3 and TFA-CsPbBr3: Zn (10 %) QDs with the temperature changes have also been analyzed. The result reveals the relationship between excitons and phonons. Based on the result, Zn2+ doped and TFA ligand induced perovskite QDs have the potential to serve as an optimal material.
•Cesium trifluoroacetic acid as a cesium source to enhance the luminescence quality of perovskite quantum dots.•The doped QDs show the highest photoluminescence intensity, further enhanced by TFA as a ligand.•PL spectra of QDs with temperature changes, revealing the relationship between excitons and phonons.•The results suggest that Zn2+ doped and TFA ligand-induced perovskite QDs could be an optimal material. |
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ISSN: | 0925-3467 1873-1252 |
DOI: | 10.1016/j.optmat.2024.115382 |