Optical properties of one-side modulation-doped quantum wells

The low temperature optical properties of one-side GaAs/Ga(Al) As quantum wells are studied by photoluminescence and excitation spectroscopy. The electronic concentration is controlled in a FET-like structure and quantitative information on the bandgap renormalization is obtained. The role of excite...

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Bibliographic Details
Published inSurface science Vol. 196; no. 1; pp. 512 - 517
Main Authors Brum, J.A., Orgonasi, J., Bastard, G., Delalande, C., Voos, M., Weimann, G., Schlapp, W.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 1988
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Summary:The low temperature optical properties of one-side GaAs/Ga(Al) As quantum wells are studied by photoluminescence and excitation spectroscopy. The electronic concentration is controlled in a FET-like structure and quantitative information on the bandgap renormalization is obtained. The role of excited conduction levels, when populated, is emphasized.
ISSN:0039-6028
1879-2758
DOI:10.1016/0039-6028(88)90734-0