Numerical simulation and performance optimization of all-inorganic CsGeI3 perovskite solar cells with stacked ETLs/C60 by SCAPS device simulation

• Published in: Materials today communications Vol. 38; p. 108587
• Main Authors: Song, Jingyu, Qiu, Long, Ding, Chunliang, Jin, Shengde, Wang, Jiafan, Huang, Kai, Huang, Heping, Wu, Jiang, Zhang, Ruitao, Sheng, Kai, Yang, Xiongying
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.03.2024
• Subjects: Double electron transport layer; Numerical simulation; Performance optimization; Perovskite solar cells; SCAPS-1D; Numerical simulation; Performance optimization; Double electron transport layer; Perovskite solar cells; SCAPS-1D
• ISSN: 2352-4928; 2352-4928
• DOI: 10.1016/j.mtcomm.2024.108587

Perovskite solar cells, particularly those featuring CsGeI3 as the absorption layer, are distinguished by their non-toxicity and inherent stability. In this work, to optimize the interface contact of the cells, enhance their built-in electric field, and consequently augment the power conversion efficiency, a C60 layer was incorporated into the electronic transport layer. This incorporation led to the formation of a novel dual-electron transport layer structure. Employing SCAPS-1D simulation software, a range of electron and hole transport layer combinations was explored. The optimal configuration was determined to be FTO/SnO2/C60/IDL1/CsGeI3/IDL2/Cu2O/Au. The absorption layer's thickness, doping concentration, defect density, and bandgap were optimized. Furthermore, an investigation was conducted on the performance implications arising from alterations in the dual electron conduction layer SnO2/C60's thickness, bandgap, and doping concentration. Concurrently, adjustments were made to refine the defect density in the interface defect layer, and an investigation was carried out to determine the optimal operational temperature. These endeavors culminated in the achievement of an impressive 30.34% optimal power conversion efficiency, representing a significant 54.25% enhancement over the pre-optimization efficiency of 19.67%. This work stands as a valuable reference for subsequent investigations into the dual electron transport layer structure in Ge-based perovskite solar cells. [Display omitted]