Use of the temperature dependence of the therma-wave technique as a thermometer

• Published in: Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Vol. 99; no. 1; pp. 583 - 586
• Main Authors: Rathmell, Robert D., Kamenitsa, Dennis, Brubaker, Steve, Reece, Ron, Pearce, N.O.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.05.1995
• ISSN: 0168-583X; 1872-9584
• DOI: 10.1016/0168-583X(95)00224-3

The therma-wave technique is widely used to monitor dose uniformity and repeatability in ion implantation. It is also known that the therma-wave signal and related parameters can be affected by the wafer temperature during implant and by the temperatures the wafer experiences after implantation. We will show the post implant dependence of therma-wave parameters on the temperature and duration of a low temperature (< 130°C) anneal. This temperature dependence could be used to monitor the average temperature of a silicon wafer in a second process after the initial TW measurement. As an example, we will infer the average temperature during an implant into the back side of a wafer by observing the change in the previously measured front side TW parameters.