High resolution X-ray diffraction study of proton irradiated silicon crystals

• Published in: Modern electronic materials Vol. 2; no. 1; pp. 29 - 32
• Main Authors: Smirnov, Igor S., Dyachkova, Irina G., Novoselova, Elena G.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.03.2016; Pensoft Publishers
• Subjects: Annealing; H+ implantation; High-resolution X-ray diffractometry; Silicon; H+ implantation; Annealing; Silicon; High-resolution X-ray diffractometry
• ISSN: 2452-1779; 2452-1779
• DOI: 10.1016/j.moem.2016.08.005

Radiation-induced modification of semiconductors is achieved by controlled introduction of intrinsic structural and impurity defects. Conventionally, introduction of radiation-induced defects is used as an efficient tool for controlling the lifetime of metastable carriers in local areas of silicon based devices and supporting mechanisms of avalanche-like breakdown through radiation-induced defect levels. Desired parameters of damaged layers are typically achieved during post-implantation heat treatment. There are recent applications of proton irradiation in silicon technology. A significant growth of luminescence was observed in proton irradiated silicon and attributed to the formation of special rod-shaped clusters of interstitial type radiation defects. We have studied the transformation of radiation-induced defects forming as a result of proton implantation into n silicon crystals with a resistivity of 100Ωcm using high resolution X-ray diffraction and shown that sequential implantation of 100, 200 and 300keV protons with a fluence of 2.1016cm−2 causes the formation of a 2.4μm thick damaged layer with a greater lattice parameter. The layer forms simultaneously with intrinsic clusters of vacancy and interstitial type radiation-induced defects. Vacuum annealing of the irradiated crystals at 600°C increases the power of the radiation-induced defects of both types and reduces their quantity. Interstitial type defects dominate after annealing at 1100°C. We have assessed the power of the defects at every transformation stage.