In situ study on the electronic structure of graphene grown on 6H–SiC (0 0 0 1¯) with synchrotron radiation photoelectron spectroscopy

• Published in: Applied surface science Vol. 258; no. 6; pp. 2187 - 2191
• Main Authors: Kang, Chaoyang, Tang, Jun, Li, Limin, Pan, Haibin, Xu, Pengshou, Wei, Shiqiang, Chen, Xiufang, Xu, Xiangang
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.01.2012
• Subjects: 6H–SiC; Electronic properties; Graphene; Synchrotron radiation photoelectron spectroscopy; Electronic properties; Graphene; 68.65.Pq; 73.22.Pr; Synchrotron radiation photoelectron spectroscopy; 87.15.Pc; 32.30.Rj; 6H–SiC
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2011.02.068

► We examine the electronic structures of the graphene grown on 6H–SiC (0 0 0 1¯). ► The LEED results showed the several reconstructions of 6H–SiC and the anisotropic graphene layers. ► The C 1s core levels showed that the interface interaction was weak. ► The existence of Si clusters was confirmed by Si 2p core levels. ► The valence band spectra indicated that both of σ and π bonds existed. Low energy electron diffraction (LEED) and synchrotron radiation photoelectron spectroscopy (SRPES) were used to study the synthesis process and detailed electronic structures of graphene produced by thermal decomposition of 6H–SiC (0 0 0 1¯) in ultrahigh vacuum (UHV). The LEED results showed that as annealing temperature increased, different reconstructions of 6H–SiC (0 0 0 1¯) appeared and the anisotropic graphene layers were produced finally. The results of C 1s core levels indicated that the component, which was assigned to graphene emerged and the interface interaction between graphene and the substrate was weak. The existence of Si clusters was confirmed by Si 2p core levels and perhaps these clusters led to rough epitaxial graphene surface. The results of valence band spectra showed that at high annealing temperature both of σ and π bonds existed in the grown graphene layers.