Growth and ferroelectric properties of sol–gel derived Bi(Mg1/2Zr1/2)O3–PbTiO3 thin films

• Published in: Ceramics international Vol. 40; no. 4; pp. 6307 - 6310
• Main Authors: Zhang, Linxing, Chen, Jun, Yin, Lu, Zhao, Hanqing, Fan, Longlong, Cao, Jiangli, Xing, Xianran
• Format: Journal Article
• Language: English
• Published: United States Elsevier Ltd 01.05.2014; Elsevier
• Subjects: A. Films; A. Sol–gel processes; C. Dielectric properties; C. Electrical properties; C. Ferroelectric properties; MATERIALS SCIENCE; A. Sol–gel processes; C. Ferroelectric properties; A. Films; C. Dielectric properties; C. Electrical properties
• ISSN: 0272-8842; 1873-3956
• DOI: 10.1016/j.ceramint.2013.09.120

The electrical properties included temperature-dependent polarization of (1−x)Bi(Mg1/2Zr1/2)O3–xPbTiO3 (BMZ–xPT) new ferroelectric films were investigated. The films with 220nm thickness grown on Pt(111)/Ti/SiO2/Si substrates via sol–gel method were well crystallized with a phase-pure perovskite structure and homogeneous microstructure. Saturated polarization hysteresis loops are observed for all BMZ–xPT compounds, and BMZ–0.85PT films with high (100) orientation show a small leakage and remanent polarization of 36.1μCcm−2, which is comparable to the (100)-oriented BiScO3–PbTiO3 thin films. The present films have high dielectric constants about 544-833. Furthermore, the polarization with elevated temperature slightly decreases, exhibiting stable ferroelectric properties and potentials for memory applications above room temperature such as non-volatile ferroelectric random access memories.