Growth and ferroelectric properties of sol–gel derived Bi(Mg1/2Zr1/2)O3–PbTiO3 thin films
The electrical properties included temperature-dependent polarization of (1−x)Bi(Mg1/2Zr1/2)O3–xPbTiO3 (BMZ–xPT) new ferroelectric films were investigated. The films with 220nm thickness grown on Pt(111)/Ti/SiO2/Si substrates via sol–gel method were well crystallized with a phase-pure perovskite str...
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Published in | Ceramics international Vol. 40; no. 4; pp. 6307 - 6310 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
Published |
United States
Elsevier Ltd
01.05.2014
Elsevier |
Subjects | |
Online Access | Get full text |
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Summary: | The electrical properties included temperature-dependent polarization of (1−x)Bi(Mg1/2Zr1/2)O3–xPbTiO3 (BMZ–xPT) new ferroelectric films were investigated. The films with 220nm thickness grown on Pt(111)/Ti/SiO2/Si substrates via sol–gel method were well crystallized with a phase-pure perovskite structure and homogeneous microstructure. Saturated polarization hysteresis loops are observed for all BMZ–xPT compounds, and BMZ–0.85PT films with high (100) orientation show a small leakage and remanent polarization of 36.1μCcm−2, which is comparable to the (100)-oriented BiScO3–PbTiO3 thin films. The present films have high dielectric constants about 544-833. Furthermore, the polarization with elevated temperature slightly decreases, exhibiting stable ferroelectric properties and potentials for memory applications above room temperature such as non-volatile ferroelectric random access memories. |
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Bibliography: | USDOE |
ISSN: | 0272-8842 1873-3956 |
DOI: | 10.1016/j.ceramint.2013.09.120 |