Effect of Deposition Temperature on Chemical Structure of Lanthanum Oxide/Si Interface Structure

• Published in: ECS transactions Vol. 3; no. 2; pp. 169 - 173
• Main Authors: Nohira, Hiroshi, Matsuda, Toru, Tachi, Kiichi, Shiino, Yasuhiro, Song, Jaeyeol, Kuroki, Yusuke, Ng, Jin Aun, Ahmet, Parhat, Kakushima, Kuniyuki, Tsutsui, Kazuo, Ikenaga, Eiji, Kobayashi, Keisuke, Iwai, H., Hattori, Takeo
• Format: Journal Article
• Language: English
• Published: 20.10.2006
• ISSN: 1938-5862; 1938-6737
• DOI: 10.1149/1.2356276

The effect of substrate-temperature during the deposition of lanthanum oxide on the chemical structure of lanthanum oxide/Si(100) interfacial transition layer formed between lanthanum oxide and Si-substrate was studied from the measurements of angle-resolved Si 1s, O 1s and La 3d5/2 photoelectron spectra. In the case of the deposition at room temperature the amount of lanthanum silicate (La-silicate) was extremely small, and was not affected by the post deposition annealing (PDA) at 300{degree sign}C, and increased by PDA at temperature above 500{degree sign}C. On the other hand, in the case of the deposition at 300{degree sign}C the amount of La-silicate increased appreciably by PDA even at 300{degree sign}C. Therefore, the existence of La-silicate accelerates the formation of La-silicate by PDA.