Pulsed electrodeposition and characterization of Bi2Te3−ySey films

• Published in: Materials research bulletin Vol. 47; no. 11; pp. 3292 - 3295
• Main Authors: Zou, Z.G., Cai, K.F., Chen, S., Qin, Z.
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.11.2012
• Subjects: A. Semiconductors; C. X-ray diffraction; D. Crystal structure; C. X-ray diffraction; A. Semiconductors; D. Crystal structure
• ISSN: 0025-5408; 1873-4227
• DOI: 10.1016/j.materresbull.2012.07.036

[Display omitted] ► Bi2Te3−ySey films synthesized by pulsed electrodeposition. ► The thermoelectric properties of the film were measured at room temperature. ► The films show much better properties then galvanostatically deposited film. Bi2Te3−ySey films were synthesized by pulsed electrodeposition on indium tin oxide (ITO)-coated glass substrates from aqueous acidic solution at room temperature. The films were deposited at the same average current density but different cathodic current density. The crystal structure, surface morphology and elemental composition of the films were investigated. Smooth and compact Bi2Te3−ySey films were obtained. As the cathodic current density increased, the grain size of the films decreased. The electrical resistivity and Seebeck coefficient of each Bi2Te3−ySey film were measured after the film being transferred onto a non-conductive rubberized fabric support. The films showed n-type conduction, with Seebeck coefficient in the range of ∼−84 to −92μV/K and electrical resistivity in the range of 102.9–109.4μΩm. The films showed much better thermoelectric properties compared with the film galvanostatically deposited at the same average current density.