Study of monolithically integrated 940 nm AlGaAs distributed Bragg reflectors on graded GaAsP/bulk Si substrates

We report the fabrication of monolithically integrated 940 nm AlGaAs distributed Bragg reflectors (DBRs) on graded GaAsP/Si substrates. Low-density surface bumps and cross-hatch patterns were observed on the DBR surfaces. Cross-sectional DBR layers are smooth and flat. The reflectance spectra of the...

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Bibliographic Details
Published inOptical materials express Vol. 13; no. 4; p. 1077
Main Authors Guo, Jia, Zhao, Yunlong, Feifel, Markus, Cheng, Hao-Tien, Yang, Yun-Cheng, Chrostowski, Lukas, Lackner, David, Wu, Chao-hsin, Xia, Guangrui (Maggie)
Format Journal Article
LanguageEnglish
Published Washington Optical Society of America 01.04.2023
Subjects
Aluminum gallium arsenides
Bragg reflectors
Gallium arsenide phosphide
Matrix methods
Reflectance
Silicon substrates
Spectra
Transfer matrices
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Summary:We report the fabrication of monolithically integrated 940 nm AlGaAs distributed Bragg reflectors (DBRs) on graded GaAsP/Si substrates. Low-density surface bumps and cross-hatch patterns were observed on the DBR surfaces. Cross-sectional DBR layers are smooth and flat. The reflectance spectra of the GaAsP/Si DBRs have lower intensities than those of the GaAs DBRs and have double peaks. Transfer matrix method calculations, surface scratch and polishing tests were conducted, which suggest that the surface cross-hatch was the cause of the inferior DBR reflectance spectra.
ISSN:2159-3930
2159-3930
DOI:10.1364/OME.484840