Electrical properties of silicon under nonuniform stress

• Published in: Journal of applied physics Vol. 74; no. 3; pp. 1832 - 1837
• Main Authors: Manku, T., Nathan, A.
• Format: Journal Article
• Language: English
• Published: Woodbury, NY American Institute of Physics 01.08.1993
• Subjects: Charge carriers: generation, recombination, lifetime, and trapping; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Conductivity phenomena in semiconductors and insulators; Electronic transport in condensed matter; Exact sciences and technology; Low-field transport and mobility; piezoresistance; Physics; Stresses; Generation; Recombination; Theoretical study; Piezoelectricity; Holes; Transport processes; Silicon; Energy-level density; Electrons

We present a detailed analysis of the electronic carrier transport in silicon when subject to a nonuniform stress distribution. Such a distribution gives rise to two independent current components which can be viewed in terms of carrier generation-recombination. One component arises as a result of t...