Electrical properties of silicon under nonuniform stress

We present a detailed analysis of the electronic carrier transport in silicon when subject to a nonuniform stress distribution. Such a distribution gives rise to two independent current components which can be viewed in terms of carrier generation-recombination. One component arises as a result of t...

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Bibliographic Details
Published inJournal of applied physics Vol. 74; no. 3; pp. 1832 - 1837
Main Authors Manku, T., Nathan, A.
Format Journal Article
LanguageEnglish
Published Woodbury, NY American Institute of Physics 01.08.1993
Subjects
Charge carriers: generation, recombination, lifetime, and trapping
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Conductivity phenomena in semiconductors and insulators
Electronic transport in condensed matter
Exact sciences and technology
Low-field transport and mobility; piezoresistance
Physics
Stresses
Generation
Recombination
Theoretical study
Piezoelectricity
Holes
Transport processes
Silicon
Energy-level density
Electrons
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Summary:We present a detailed analysis of the electronic carrier transport in silicon when subject to a nonuniform stress distribution. Such a distribution gives rise to two independent current components which can be viewed in terms of carrier generation-recombination. One component arises as a result of the nonuniform stress induced position dependent density of states, and the other due to stress induced shifts in the band edges. The various parameters and coefficients describing these phenomena are presented.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.354790