Electrical properties of silicon under nonuniform stress
We present a detailed analysis of the electronic carrier transport in silicon when subject to a nonuniform stress distribution. Such a distribution gives rise to two independent current components which can be viewed in terms of carrier generation-recombination. One component arises as a result of t...
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| Published in | Journal of applied physics Vol. 74; no. 3; pp. 1832 - 1837 |
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| Main Authors | , |
| Format | Journal Article |
| Language | English |
| Published |
Woodbury, NY
American Institute of Physics
01.08.1993
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| Subjects | |
| Online Access | Get full text |
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| Abstract | We present a detailed analysis of the electronic carrier transport in silicon when subject to a nonuniform stress distribution. Such a distribution gives rise to two independent current components which can be viewed in terms of carrier generation-recombination. One component arises as a result of the nonuniform stress induced position dependent density of states, and the other due to stress induced shifts in the band edges. The various parameters and coefficients describing these phenomena are presented. |
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| AbstractList | We present a detailed analysis of the electronic carrier transport in silicon when subject to a nonuniform stress distribution. Such a distribution gives rise to two independent current components which can be viewed in terms of carrier generation-recombination. One component arises as a result of the nonuniform stress induced position dependent density of states, and the other due to stress induced shifts in the band edges. The various parameters and coefficients describing these phenomena are presented. |
| Author | Manku, T. Nathan, A. |
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| Cites_doi | 10.1103/PhysRevB.43.12634 10.1016/0038-1101(78)90272-1 10.1109/43.62757 10.1063/1.353287 10.1103/PhysRev.101.944 10.1103/PhysRev.94.42 |
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| Keywords | Stresses Generation Recombination Theoretical study Piezoelectricity Holes Transport processes Silicon Energy-level density Electrons |
| Language | English |
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| References | (2024020211132838200_r3) 1991; 43 (2024020211132838200_r4) 1993; 73 (2024020211132838200_r6) 1956; 101 (2024020211132838200_r1) 1954; 94 (2024020211132838200_r5) 1978; 21 (2024020211132838200_r2) 1990; 9 |
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| SubjectTerms | Charge carriers: generation, recombination, lifetime, and trapping Condensed matter: electronic structure, electrical, magnetic, and optical properties Conductivity phenomena in semiconductors and insulators Electronic transport in condensed matter Exact sciences and technology Low-field transport and mobility; piezoresistance Physics |
| Title | Electrical properties of silicon under nonuniform stress |
| Volume | 74 |
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