Reset-Voltage Controlled Resistance-State and Applications of Forming-Free Fe-Doped SrTiO3 Thin-Film Memristor

In this study, we prepared a strontium ferrite titanate (STF) thin film using a sol–gel process to insulate resistive random-access memory (RRAM) applications. Compared to the typical strontium titanate (STO) RRAM, the improvement in the resistive switching characteristics in STF RRAM is obvious. Th...

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Published inMaterials Vol. 17; no. 20; p. 5021
Main Authors Lee, Ke-Jing, Wu, Cheng-Hua, Lee, Cheng-Jung, Chou, Dei-Wei, Wang, Na-Fu, Wang, Yeong-Her
Format Journal Article
LanguageEnglish
Published Basel MDPI AG 14.10.2024
MDPI
Subjects
Behavior
Crystal structure
Defects
Dielectric properties
Electric potential
Glass substrates
Iron
Microscopy
Morphology
Oxidation
Physical properties
Random access memory
resistive random-access memory
Sol-gel processes
sol–gel
Spectrum analysis
Strontium
strontium ferrite titanate
Strontium titanates
Thin films
Voltage
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Abstract In this study, we prepared a strontium ferrite titanate (STF) thin film using a sol–gel process to insulate resistive random-access memory (RRAM) applications. Compared to the typical strontium titanate (STO) RRAM, the improvement in the resistive switching characteristics in STF RRAM is obvious. The Al/STO/ITO/Glass RRAM set/reset voltages of −1.4 V/+3.3 V and the Al/STF/ITO/Glass RRAM set/reset voltages of −0.45 V/+1.55 V presented a memory window larger than 103, a low operating voltage and device stability of more than 104 s. In this study, the influence of Fe on the conducting paths and the bipolar resistive switching properties of Al/STF/ITO/Glass RRAM devices is investigated.
AbstractList In this study, we prepared a strontium ferrite titanate (STF) thin film using a sol–gel process to insulate resistive random-access memory (RRAM) applications. Compared to the typical strontium titanate (STO) RRAM, the improvement in the resistive switching characteristics in STF RRAM is obvious. The Al/STO/ITO/Glass RRAM set/reset voltages of −1.4 V/+3.3 V and the Al/STF/ITO/Glass RRAM set/reset voltages of −0.45 V/+1.55 V presented a memory window larger than 10 3 , a low operating voltage and device stability of more than 104 s. In this study, the influence of Fe on the conducting paths and the bipolar resistive switching properties of Al/STF/ITO/Glass RRAM devices is investigated.
In this study, we prepared a strontium ferrite titanate (STF) thin film using a sol-gel process to insulate resistive random-access memory (RRAM) applications. Compared to the typical strontium titanate (STO) RRAM, the improvement in the resistive switching characteristics in STF RRAM is obvious. The Al/STO/ITO/Glass RRAM set/reset voltages of -1.4 V/+3.3 V and the Al/STF/ITO/Glass RRAM set/reset voltages of -0.45 V/+1.55 V presented a memory window larger than 103, a low operating voltage and device stability of more than 104 s. In this study, the influence of Fe on the conducting paths and the bipolar resistive switching properties of Al/STF/ITO/Glass RRAM devices is investigated.In this study, we prepared a strontium ferrite titanate (STF) thin film using a sol-gel process to insulate resistive random-access memory (RRAM) applications. Compared to the typical strontium titanate (STO) RRAM, the improvement in the resistive switching characteristics in STF RRAM is obvious. The Al/STO/ITO/Glass RRAM set/reset voltages of -1.4 V/+3.3 V and the Al/STF/ITO/Glass RRAM set/reset voltages of -0.45 V/+1.55 V presented a memory window larger than 103, a low operating voltage and device stability of more than 104 s. In this study, the influence of Fe on the conducting paths and the bipolar resistive switching properties of Al/STF/ITO/Glass RRAM devices is investigated.
In this study, we prepared a strontium ferrite titanate (STF) thin film using a sol–gel process to insulate resistive random-access memory (RRAM) applications. Compared to the typical strontium titanate (STO) RRAM, the improvement in the resistive switching characteristics in STF RRAM is obvious. The Al/STO/ITO/Glass RRAM set/reset voltages of −1.4 V/+3.3 V and the Al/STF/ITO/Glass RRAM set/reset voltages of −0.45 V/+1.55 V presented a memory window larger than 103, a low operating voltage and device stability of more than 104 s. In this study, the influence of Fe on the conducting paths and the bipolar resistive switching properties of Al/STF/ITO/Glass RRAM devices is investigated.
Author Chou, Dei-Wei
Wang, Na-Fu
Wang, Yeong-Her
Wu, Cheng-Hua
Lee, Cheng-Jung
Lee, Ke-Jing
AuthorAffiliation 2 Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan 701401, Taiwan; q16091128@gs.ncku.edu.tw (C.-H.W.); 11201043@ncku.edu.tw (C.-J.L.)
1 Center for Environmental Toxin and Emerging-Contaminant Research & Technology Center, Department of Electronic Engineering, Cheng Shiu University, Kaohsiung City 83347, Taiwan; 2227@gcloud.csu.edu.tw (D.-W.C.); k0481@gcloud.csu.edu.tw (N.-F.W.)
AuthorAffiliation_xml – name: 1 Center for Environmental Toxin and Emerging-Contaminant Research & Technology Center, Department of Electronic Engineering, Cheng Shiu University, Kaohsiung City 83347, Taiwan; 2227@gcloud.csu.edu.tw (D.-W.C.); k0481@gcloud.csu.edu.tw (N.-F.W.)
– name: 2 Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan 701401, Taiwan; q16091128@gs.ncku.edu.tw (C.-H.W.); 11201043@ncku.edu.tw (C.-J.L.)
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  start-page: 11411
  year: 2016
  ident: ref_22
  article-title: Sol–gel synthesis of nanoporous NiCo2O4 thin films on ITO glass as high-performance supercapacitor electrodes
  publication-title: Ceram. Int.
  doi: 10.1016/j.ceramint.2016.04.071
  contributor:
    fullname: Liu
– volume: 92
  start-page: 222106
  year: 2008
  ident: ref_23
  article-title: Direct observation of conducting filaments on resistive switching of NiO thin films
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.2931087
  contributor:
    fullname: Son
SSID ssj0000331829
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Snippet In this study, we prepared a strontium ferrite titanate (STF) thin film using a sol–gel process to insulate resistive random-access memory (RRAM) applications....
In this study, we prepared a strontium ferrite titanate (STF) thin film using a sol-gel process to insulate resistive random-access memory (RRAM) applications....
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SubjectTerms Behavior
Crystal structure
Defects
Dielectric properties
Electric potential
Glass substrates
Iron
Microscopy
Morphology
Oxidation
Physical properties
Random access memory
resistive random-access memory
Sol-gel processes
sol–gel
Spectrum analysis
Strontium
strontium ferrite titanate
Strontium titanates
Thin films
Voltage
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Title Reset-Voltage Controlled Resistance-State and Applications of Forming-Free Fe-Doped SrTiO3 Thin-Film Memristor
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