Reset-Voltage Controlled Resistance-State and Applications of Forming-Free Fe-Doped SrTiO3 Thin-Film Memristor

In this study, we prepared a strontium ferrite titanate (STF) thin film using a sol–gel process to insulate resistive random-access memory (RRAM) applications. Compared to the typical strontium titanate (STO) RRAM, the improvement in the resistive switching characteristics in STF RRAM is obvious. Th...

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Published inMaterials Vol. 17; no. 20; p. 5021
Main Authors Lee, Ke-Jing, Wu, Cheng-Hua, Lee, Cheng-Jung, Chou, Dei-Wei, Wang, Na-Fu, Wang, Yeong-Her
Format Journal Article
LanguageEnglish
Published Basel MDPI AG 14.10.2024
MDPI
Subjects
Behavior
Crystal structure
Defects
Dielectric properties
Electric potential
Glass substrates
Iron
Microscopy
Morphology
Oxidation
Physical properties
Random access memory
resistive random-access memory
Sol-gel processes
sol–gel
Spectrum analysis
Strontium
strontium ferrite titanate
Strontium titanates
Thin films
Voltage
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Summary:In this study, we prepared a strontium ferrite titanate (STF) thin film using a sol–gel process to insulate resistive random-access memory (RRAM) applications. Compared to the typical strontium titanate (STO) RRAM, the improvement in the resistive switching characteristics in STF RRAM is obvious. The Al/STO/ITO/Glass RRAM set/reset voltages of −1.4 V/+3.3 V and the Al/STF/ITO/Glass RRAM set/reset voltages of −0.45 V/+1.55 V presented a memory window larger than 103, a low operating voltage and device stability of more than 104 s. In this study, the influence of Fe on the conducting paths and the bipolar resistive switching properties of Al/STF/ITO/Glass RRAM devices is investigated.
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ISSN:1996-1944
1996-1944
DOI:10.3390/ma17205021