Metallic to hopping conduction transition in Ta2O5−x/TaOy resistive switching device

• Published in: Applied physics letters Vol. 105; no. 6
• Main Authors: Zhang, Ye, Deng, Ning, Wu, Huaqiang, Yu, Zhiping, Zhang, Jinyu, Qian, He
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 11.08.2014
• Subjects: Applied physics; Carrier transport; Computer memory; Conduction cooling; Hopping conduction; Low resistance; Positive temperature coefficient; Switching; Tantalum; Tantalum oxides; Temperature; Temperature dependence
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.4893325

In this Letter, a comprehensive analysis of how the metallic behavior transition to hopping was presented by studying the transport mechanisms of low resistance states (LRS) in Ta2O5−x/TaOy resistive switching devices at very low temperatures. Three types of conduction behaviors were reported through temperature-dependent measurements ranging from 5 K to 250 K. Memory cells at low LRS show metallic behavior due to the formation of metallic filament. The temperature dependence of resistance at medium LRS exhibits an interesting phenomenon that a positive temperature coefficient transfers into a negative one at temperature of 20 K. Detailed analysis reveals that this phenomenon is caused by the coexistence of extended and localized states, with metallic conduction at higher temperatures and variable-range hopping at lower temperatures. Carrier transport at high LRS is dominated by electrons hopping conduction with nearest-neighboring hopping conduction changing into variable-range hopping as temperature decreases.