A Low-Noise Image Sensor Readout Circuit With Internal Timing Generator

We describe the design, development, and performance of a complementary metal-oxide semiconductor (CMOS) image sensor read-out circuit. Designed in a 0.35-μm CMOS technology and occupying an area of 2.3 × 13.6 mm 2 , the proposed multipixel image sensor readout integrated circuit with internal timin...

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Bibliographic Details
Published inIEEE sensors letters Vol. 2; no. 4; pp. 1 - 4
Main Authors Ngo, Trong-Hieu, Ukaegbu, Ikechi Augustine, Kim, Min-Gug, Park, Hyo-Hoon
Format Journal Article
LanguageEnglish
Published Piscataway IEEE 01.12.2018
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Circuit design
CMOS
Dynamic range
electromagnetic wave sensors (OPTO)
Image acquisition
Image sensors
Integrated circuits
Metal oxides
Power consumption
sensor packaging (PACK)
Sensor systems
Sensor systems (SYST)
Sensors
Timing
Topology
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Summary:We describe the design, development, and performance of a complementary metal-oxide semiconductor (CMOS) image sensor read-out circuit. Designed in a 0.35-μm CMOS technology and occupying an area of 2.3 × 13.6 mm 2 , the proposed multipixel image sensor readout integrated circuit with internal timing generator achieves high performance with 188.7-μV root mean square (RMS) of ultralow output noise, wide linear dynamic range of 2.3 V, low power consumption of 42 mA, and a simple timing scheme. The approaches to boost linear dynamic range are presented. The image sensor also provides the trigger signal for data acquisition purpose.
ISSN:2475-1472
2475-1472
DOI:10.1109/LSENS.2018.2875444